TcSUH
Warning: Undefined variable $events_postname in /home1/tcsuh570/public_html/events_select2.php on line 105
Special Seminar
Second-generation HTS Conductors
Date: Monday May 02, 2005
Time: 3:00 pm – 4:00 pm
Location: Houston Science Center – Building 593 — Room 102
Overview
High temperature superconductors (HTS) are nearing their commercial viability with the projected roll out of second-generation conductors within one year. Second-generation HTS conductors promise to meet the price-performance characteristics needed for widespread use of HTS. SuperPower has been working on the scale up of second-generation HTS since its formation in 2000. This presentation would discuss the R&D over the last 5 years at SuperPower that has resulted in successful scale up of high-throughput processes to produce 100 m lengths of second-generation HTS conductors. The R&D has been an integration of basic materials science, equipment engineering, and process development. Such an integration was applied to all eight processing steps involved in fabrication of second-generation HTS conductors that include substrate polishing, buffer deposition, superconductor deposition, slitting, and copper stabilizer application. In addition, novel characterization techniques were applied to develop off-line and on-line quality control tools. The presentation would provide the latest development in the scale up R&D of second-generation HTS conductors as well as detail the remaining challenges for successful use of HTS in commercial applications
Download: Event PDF
Back to TcSUH News & Events
Special Seminar
Studies of Growth for BST Ferroelectric Oxide Thin Films
by: Prof. Yanrong Li
Date: Friday April 15, 2005
Time: 4:00 pm – 5:00 pm
Location: Houston Science Center – Building 593 — Room 102
Overview
We have systematically investigated the epitaxial behavior, microstructures, and dielectric properties of ferroelectric (Ba,Sr)TiO3 thin films on various substrates grown by pulsed laser ablation and laser MBE. We have focused on the film growth mechanisms, low temperature crystallization, and buffer- layer-induced high oriented film growth as well as oxide superlattices. Microstructural studies from x-ray diffraction, rocking curve measurements, and electron microscopy reveal that the films have excellent epitaxial behavior with good single crystallinity and sharp interfacial structures and smooth surface morphology for the films grown on substrate surfaces.
Download: Event PDF
Back to TcSUH News & Events
Special Seminar
Manufacturability at the Nanoscale
by: Dr. Christie Marrian
Date: Thursday April 07, 2005
Time: 12:00 pm – 1:00 pm
Location: Houston Science Center – Building 593 — Room 102
Overview
Using the 2005 IBM Global Technology Outlook, I will describe the roadmap for device technology and manufacturing in the semiconductor industry. Looking beyond these roadmaps, I will discuss moving beyond our current methods of fabrication of nanoscale devices and circuits. These almost always rely on heroic efforts of nanofabrication that are inappropriate for anything other than research. To achieve, at the nanoscale, any level of volume manufacturing requires more than extensions of the paradigms practiced today. We must look to Nanotechnology for help in overcoming this challenge as to fail to do so will consign nanostructure science and technology to be a mere intellectual curiosity.
Download: Event PDF
Back to TcSUH News & Events
Special Seminar
Recent Issues in Data Storage
by: Prof. Erik Svedberg
Date: Thursday April 07, 2005
Time: 10:00 am – 11:00 am
Location: Houston Science Center – Building 593 — Room 102
Overview
The “trilemma” of data-storage is becoming more challenging as the packing density of information continues to increase on disc drives. We are today aiming to reach a density of 1Tbit/in2. The conflicting magnetic requirements while shrinking the bit size will be described in this presentation and I will visit some of the interesting challenges in materials science and measurement technology encountered during my last five years working in this area. The presentation will touch upon AFM/MFM measurements used for determination of signal-to-noise ratios and data aging. There is always a need to “see” what you have recorded, not only to receive a feedback signal from the system under study. Nano-particles versus grains in thin films and statistical size analysis will be included as it is an important aspect for future technologies. Today grain size distributions rely largely on SEM and TEM images that provide too little statistical material. Electroplated nano-junctions present the possibility of novel properties that are e.g. useful in sensors for reading stored information. As the bit size shrinks the magnetic signal is reduced and there is a search for more sensitive detectors. Combinatorial approaches to material science and x-ray diffraction (XRD) texture determination of important magnetic materials, such as FePt, will also be discussed. The complex factors determining the magnetic thin film properties can be initially screened and optimized in ways similar to advanced drug discovery.
Download: Event PDF
Back to TcSUH News & Events
Special Seminar
Thin Film Hetero Structure Solid Oxide Fuel Cell
by: Prof. Alex Ignatiev
Date: Thursday March 24, 2005
Time: 12:00 pm – 1:00 pm
Location: Houston Science Center – Building 593 — Room 102
Overview
A thin film solid oxide fuel cell (TFSOFC) with significantly reduced operating temperature has been developed based on thin film deposition and photolithographic processing. The unique thin film SOFC design incorporates a thin film (<1 micron) oxide electrolyte, deposited on a nickel foil substrate by pulsed laser deposition and MOCVD, and deposition of a micro porous thin film conducting oxide La0.5Sr0.5COO3 (LSCO) cathode on top of the electrolyte thin film forming the fuel cell heterostructure. The nickel substrate is then made porous (and thus becomes the cell anode) by photolithographic patterning and etching. This thin film SOFC structure results in operating temperatures as low as 450°C, which now allows for the utilization of more standard cell support materials and also results in much reduced thermal stress and thermal degradation. The thin film SOFC has stably operated in a temperature range of 450-570°C, significantly lower than bulk SOFC's, and has yielded a maximum output power density of ~110mW/cm2 in that temperature range. The low operating temperatures coupled with the nickel anode also allow for the direct conversion of hydrocarbons, especially methane and methanol without the problem of coking, thus resulting in a true self-reforming SOFC. The thin film character of the thin film SOFC when integrated with thin film interconnects is expected to result in a high power to volume ratio (= 10 W/cm3), which will be important in a variety of power applications.
Download: Event PDF
Back to TcSUH News & Events