TcSUH EventS
Joint Seminar & Colloquia
Gate tunable spin transport in a two-dimensional semiconductor
by: Prof. Ahmet Avsar
Affiliation: Department of Materials Science & Engineering, National University of Singapore
Date: Tuesday January 14, 2025
Time: 10:00 am – 11:00 am
Location: Houston Science Center – Building 593 — Room 102
Overview
Gate tunable spin transport in a two-dimensional semiconductor
Biography
Dr. Avsar has been an Assistant Professor and NRF Fellow in the Department of Material Science and Engineering at the National University of Singapore (NUS) since September 2022. Before joining NUS, Dr. Ahmet was an Assistant Professor of Physics at Newcastle University (UK) and worked as an EPFL Fellow (co-funded by the European Marie Curie COFUND program) at the Swiss Federal Institute of Technology Lausanne (EPFL, Switzerland) between 2016 and 2020 after completing his PhD in Physics at NUS. He is interested in exploiting the multiple quantum degrees of freedom (spin, pseudospin, and valley) available to novel materials in the ultimate atomically thin limit for applications in energy-efficient information technologies. He fabricates mesoscopic devices based on two-dimensional heterostructures and characterizes their electronic, magnetic, and optical properties (mostly) at low temperatures. His NRF-supported research program utilizes electrons, magnons, and superconducting quasiparticles to transport and process spin information for efficient and environmentally sustainable green computing.
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