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Special Seminar

High Energy Atomic Beam Nanolithography

Dr. John C. Wolfe

by: Dr. John C. Wolfe

Date: Friday December 06, 2002

Time: 12:00 pm – 1:00 pm

Location: Houston Science Center – Building 593 — Room 102

Overview

Ion beam proximity (IBP) lithography is “stencil printing” where helium ions are the “paint” and the stencils are thin silicon membranes with etched open windows. Diffraction, penumbral blur, and ion scattering in the resist are all consistent with 1 nm printing. However, the scattering of the lithography ions by electrostatic charge in the mask and substrate limit the practical resolution to the 50-100 nm regime. This seminar describes the discovery of a remarkable source of energetic helium atoms that eliminates this last obstacle to sub-10 nm printing. Applications to nanomagnetics and nanoelectronics will be discussed.

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